Advances in Photovoltaics: Part 4, by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

Advances in Photovoltaics: Part Four presents invaluable info at the demanding situations confronted through the transformation of our strength offer procedure to extra effective, renewable energies.

The quantity discusses the subject from an international viewpoint, offering the most recent info on photovoltaics, a cornerstone technology.

It covers all facets of this significant semiconductor expertise, reflecting at the large and dynamic advances which have been made in this subject considering 1975, whilst the 1st publication on sun cells-written by means of Harold J. Hovel of IBM-was released as quantity eleven within the now recognized sequence on Semiconductors and Semimetals.

Readers will achieve a behind the curtain examine the continual and quick medical improvement that ends up in the required fee and value discount rates in worldwide commercial mass-production.

  • Written by means of major, across the world recognized specialists on his topic
  • Provides an in-depth review of the present prestige and views of skinny movie PV technologies
  • Discusses the demanding situations confronted through the transformation of our strength offer method to extra effective, renewable energies
  • Delves deep into photovoltaics, a cornerstone technolog

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Limitations for taller ingots are the manufacturing of the crucibles itself and the increasing distance of the top heater to the melt surface with increasing ingot height. The relatively low fill factor of the crucible with polysilicon requires a crucible about a factor of 2 taller than the final ingot will be. After melting, there will be a significant gap between the top heater and the melt surface. To overcome the limitations of the crucible manufacturing, the company Schott had added an additional ring of quartz ceramic on top of a standard crucible, which allowed them to charge more silicon into the system and grow taller ingots from standard crucibles.

2012). The shift of the solid–liquid interface is managed by variations of the heater power of the different heating elements. Graphite heaters operated by resistance heating are the standard configuration. Induction heating models are more an exotic variation. The amount of carbon in the system is reduced in Silicon Crystallization Technologies 39 case of induction heating, but specific graphite parts are still required, like the susceptor or the insulation material. In any case, induction heating bears a certain risk of water spilling since the copper tubes have to be watercooled.

The temperature distribution for an 800 process under an argon flow of 20 l/min is visualized by numerical simulations in Fig. 10. A certain challenge is the proper control of the gap between the radiation shield and the melt surface: the smaller the gap, the better for heat removal and for crystallization. But obviously, if it becomes too small, there is a high risk of touching the melt, which would be the end of the process (and most likely the end of the radiation shield). How precisely the gap might be controlled Figure 10 Numerical simulation of the Czochralski growth chamber.

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