Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber

By Gerhard P. Willeke, Eicke R. Weber

Semiconductors and Semimetals has exotic itself in the course of the cautious number of recognized authors, editors, and participants. initially well known because the ''Willardson and Beer'' sequence, it has succeeded in publishing a number of landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term effect and reflecting the really interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and may stay of serious curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and glossy undefined. This quantity is the second of a collection of seven with regards to photovoltaics.

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1. The depletion region recombination (second diode) current It has been shown in Section 3 that, at full illumination intensity, the recombination current of a typical multicrystalline silicon solar cell influences may be not its open-circuit voltage, but at least its fill factor and thus its efficiency. This influence gets even stronger and also regards the open-circuit voltage if the cell is operated at reduced illumination intensity, where all voltages become lower. Note that the yearly averaged energy yield of a solar panel, especially if operated in middle Europe, strongly depends on its low lightlevel performance.

This indicates that also grain boundaries lead to a locally increased current flow. The characteristic of the base-collector junction of an industrially fabricated npn transistor (E), where the diode edge is lying well passivated below an oxide layer, showed an ideal shape with an ideality factor of 1 over the whole bias range. 25), leading to two J eff 0 -values for each diode size. Also the reverse conductance Gp (the inverse of Rp, in units of S/mm2) was measured at about À1 V for each cell fraction.

This has to be compared with the 150% increase of J 01 in reality. This demonstrates that the inhomogeneity of the lifetime in multicrystalline material is the main reason why there the experimental value of J 01 of these cells is significantly higher than that expected from the linearly averaged effective lifetime of this material. Another origin of nonideal behavior of the first diode current comes from an injection-level dependent effective lifetime. 8) only holds for a constant value of the excess carrier lifetime.

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